symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol device typ max units n-ch 37 50 c/w n-ch 74 90 c/w r jl n-ch 28 40 c/w p-ch 35 50 c/w p-ch 73 90 c/w r jl p-ch 32 40 c/w thermal characteristics: n-channel and p-channel -55 to 150 -55 to 150 maximum junction-to-lead c steady-state parameter maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a 60 -60 20 drain-source voltage 20 gate-source voltage absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel w 4.7 3.8 20 2.5 1.6 -2.9 -3.5 2.5 1.6 a continuous drain current a t a =25c i d t a =70c pulsed drain current b r ja maximum junction-to-ambient a steady-state -20 t a =70c power dissipation t a =25c p d steady-state junction and storage temperature range maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s AOP609 n-channel p-channel v ds (v) = 60v -60v i d = 4.7a (v gs =10v) -3.5a (v gs =-10v) r ds(on) r ds(on) < 60m ? (v gs =10v) < 115m ? (v gs =-10v) < 75m ? (v gs =4.5v) < 140m ? (v gs =-4.5v) the AOP609 uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used in h-bridge, inverters and other applications. standard product AOP609 is pb- free (meets rohs & sony 259 specifications). g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 pdip-8 n-channel p -channel d1 s1 g1 g2 d2 s2 www.freescale.net.cn 1/7 complementary enhancement mode field effect transistor general description features
symbol min typ max units bv dss 60 v 1 t j =55c 5 i gss 250 a v gs(th) 1.5 2.4 3 v i d(on) 20 a 49 60 t j =125c 65 57 75 m ? g fs 17 s v sd 0.78 1 v i s 3.5 a c iss 450 570 pf c oss 74 pf c rss 30 pf r g 1.65 2 ? q g (10v) 5.1 7 nc q g (4.5v) 2.5 3 nc q gs 1nc q gd 1.4 nc t d(on) 5.4 ns t r 5.5 ns t d(off) 17.2 ns t f 2.9 ns t rr 25.4 35 ns q rr 29.4 nc v gs =0v, v ds =30v, f=1mhz v gs =0v, v ds =0v, f=1mhz switching parameters reverse transfer capacitance gate resistance output capacitance i s =1a,v gs =0v v gs =10v, i d =4.7a diode forward voltage v gs =10v, v ds =30v, r l =6 ? , r gen =3 ? gate source charge gate drain charge turn-on delaytime turn-on rise time total gate charge v gs =10v, v ds =30v, i d =4.7a r ds(on) static drain-source on-resistance forward transconductance m ? v gs =4.5v, i d =3.0a v ds =5v, i d =4.7a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =10v, v ds =5v a gate-body leakage current v ds =0v, v gs = 20v drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =48v, v gs =0v n channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters maximum body-diode continuous current dynamic parameters body diode reverse recovery charge total gate charge i f =4.7a, di/dt=100a/ s turn-off delaytime turn-off fall time body diode reverse recovery time i f =4.7a, di/dt=100a/ s input capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 2 : sept 2007 www.freescale.net.cn 2/7 AOP609 complementary enhancement mode field effect transistor
typical electrical and thermal characteristics: n-channel 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3.5v 4.0v 10.0v 5.0v 4.5v 0 5 10 15 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 20 30 40 50 60 70 80 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5 i d =3a i d =4.7a 40 60 80 100 120 140 160 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =4.7a 25c 125 www.freescale.net.cn 3/7 AOP609 complementary enhancement mode field effect transistor
typical electrical and thermal characteristics: n-channel 0 2 4 6 8 10 0123456 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 0 102030405060 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to - ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1m s 0.1s 1s 10s dc t j(max) =150c t a =25c r ds(on) limited v ds =30v i d = 4.7a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =50c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, sin g le p ulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 4/7 AOP609 complementary enhancement mode field effect transistor
symbol min typ max units bv dss -60 v -1 t j =55c -5 i gss 100 a v gs(th) -1.5 -1.8 -3 v i d(on) -20 a 95 115 t j =125c 133 112 140 m ? g fs 9s v sd -0.77 -1 v i s -3.5 a c iss 897 1080 pf c oss 88 pf c rss 36 pf r g 7.2 9 ? q g (10v) 8.1 10 nc q g (4.5v) 3.9 5 nc q gs 1.4 nc q gd 1.7 nc t d(on) 9ns t r 7.2 ns t d(off) 35 ns t f 25.5 ns t rr 25.8 35 ns q rr 28.8 nc p-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =-250 a, v gs =0v i dss zero gate voltage drain current v ds =-48v, v gs =0v a gate-body leakage current v ds =0v, v gs =20v m ? v gs =-4.5v, i d =-2.8a gate threshold voltage v ds =v gs i d =-250 a on state drain current v gs =-10v, v ds =-5v v ds =-5v, i d =-3.5a r ds(on) static drain-source on-resistance forward transconductance v gs =-10v, i d =-3.5a diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current output capacitance reverse transfer capacitance gate resistance dynamic parameters input capacitance v gs =0v, v ds =-30v, f=1mhz v gs =0v, v ds =0v, f=1mhz total gate charge (4.5v) gate source charge gate drain charge switching parameters total gate charge (10v) v gs =-10v, v ds =-30v, i d =-3.5a turn-on delaytime v gs =-10v, v ds =-30v, r l =8.1 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-3.5a, di/dt=100a/ s body diode reverse recovery charge i f =-3.5a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev2:sept 2007 www.freescale.net.cn 5/7 AOP609 complementary enhancement mode field effect transistor
typical electrical and thermal characteristics: p-channe l 0 5 10 15 20 25 30 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3.0v -3.5v -4.5v -10v -4.0v -6.0v -5.0v 0 3 6 9 12 15 012345 -v gs (volts) figure 2: transfer characteristics -i d (a) 80 90 100 110 120 0246810 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-4.5v 60 80 100 120 140 160 180 200 2345678910 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-3.5a 25c 125c i d =-3.5a i d =-2.8a www.freescale.net.cn 6/7 AOP609 complementary enhancement mode field effect transistor
typical electrical and thermal characteristics: p-channe l 0 2 4 6 8 10 0246810 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 0 102030405060 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to - ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 1 0s dc r ds(on) limited t j ( max ) =150c, t a =25c v ds =-30v i d =-3.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =50c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 7/7 AOP609 complementary enhancement mode field effect transistor
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